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AP04N70BP-A Fiches technique(PDF) 2 Page - Advanced Power Electronics Corp.

No de pièce AP04N70BP-A
Description  N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Download  6 Pages
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Fabricant  A-POWER [Advanced Power Electronics Corp.]
Site Internet  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP04N70BP-A Fiches technique(HTML) 2 Page - Advanced Power Electronics Corp.

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Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
650
-
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.6
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=2A
-
-
2.4
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=2A
-
2.5
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=600V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150
oC)
VDS=480V,VGS=0V
-
-
100
uA
IGSS
Gate-Source Leakage
VGS=±30V
-
-
±100
nA
Qg
Total Gate Charge
3
ID=4A
-
16.7
-
nC
Qgs
Gate-Source Charge
VDS=480V
-
4.1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
4.9
-
nC
td(on)
Turn-on Delay Time
3
VDD=300V
-
11
-
ns
tr
Rise Time
ID=4A
-
8.3
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
23.8
-
ns
tf
Fall Time
RD=75Ω
-
8.2
-
ns
Ciss
Input Capacitance
VGS=0V
-
950
-
pF
Coss
Output Capacitance
VDS=25V
-
65
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
6
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
IS
Continuous Source Current ( Body Diode )
VD=VG=0V , VS=1.5V
-
-
4
A
ISM
Pulsed Source Current ( Body Diode )
1
--
15
A
VSD
Forward On Voltage
3
Tj=25℃, IS=4A, VGS=0V
-
-
1.5
V
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25
oC , V
DD=50V , L=25mH , RG=25Ω , IAS=4A.
3.Pulse width <300us , duty cycle <2%.
2/6
AP04N70BP-A


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