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AP04N70BF-H Fiches technique(PDF) 5 Page - Advanced Power Electronics Corp.

No de pièce AP04N70BF-H
Description  N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Fabricant  A-POWER [Advanced Power Electronics Corp.]
Site Internet  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP04N70BF-H Fiches technique(HTML) 5 Page - Advanced Power Electronics Corp.

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Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of
Fig 12. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
5/6
AP04N70BF-H
0
1
2
3
4
5
-50
0
50
100
150
T j , Junction Temperature (
o C )
0
2
4
6
8
10
12
14
16
0
5
10
15
20
25
Q G , Total Gate Charge (nC)
I D =4A
V DS =480V
V DS =400V
V DS =320V
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V SD (V)
T j = 25
o C
T j =150
o C
1
100
10000
1
6
11
16
21
26
31
V DS (V)
f=1.0MHz
Ciss
Coss
Crss


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