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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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XN4482 Fiches technique(PDF) 2 Page - Panasonic Semiconductor |
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XN4482 Fiches technique(HTML) 2 Page - Panasonic Semiconductor |
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2 / 4 page  2 Composite Transistors XN4482 s Electrical Characteristics (Ta=25˚C) q Tr1 Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = –10µA, IE = 0 –60 V Collector to emitter voltage VCEO IC = –2mA, IB = 0 –50 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –7 V Collector cutoff current ICBO VCB = –20V, IE = 0 – 0.1 µA ICEO VCE = –10V, IB = 0 –100 µA Forward current transfer ratio hFE VCE = –10V, IC = –2mA 160 460 Collector to emitter saturation voltage VCE(sat) IC = –100mA, IB = –10mA – 0.3 – 0.5 V Transition frequency fT VCB = –10V, IE = 1mA, f = 200MHz 80 MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 2.7 pF q Tr2 Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = –10µA, IE = 0 –60 V Collector to emitter voltage VCEO IC = –2mA, IB = 0 –50 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –5 V Collector cutoff current ICBO VCB = –20V, IE = 0 – 0.1 µA Forward current transfer ratio hFE1 VCE = –10V, IC = –150mA* 85 340 hFE2 VCE = –10V, IC = –500mA* 40 Collector to emitter saturation voltage VCE(sat) IC = –300mA, IB = –30mA* – 0.35 – 0.6 V Base to emitter saturation voltage VBE(sat) IC = –300mA, IB = –30mA* –1.1 –1.5 V Transition frequency fT VCB = –10V, IE = 1mA, f = 200MHz 200 MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 5 15 pF * Pulse measurement Common characteristics chart PT — Ta 0 100 200 300 400 500 0 40 80 120 160 Ambient temperature Ta (˚C) |
Numéro de pièce similaire - XN4482 |
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Description similaire - XN4482 |
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