2

Symbol

Parameter

Units

Absolute Max.

V

cc

Device Voltage, RF output to ground (T = 25

°C)

V

6

P

in

CW RF Input Power (Vcc = 3V)

dBm

15

W

0.6

Junction Temperature

°C

150

Storage Temperature

°C

-65 to 150

Notes:

1. Operation of this device in excess of any of

these limits may cause permanent damage.

2. Thermal resistance measured using 150

°C

Liquid Crystal Measurement Technique.

3. Board (package belly) temperature, Tc, is

25

°C. Derate 8.1 mW/°C for Tc> 120.8°C.

Electrical Specifications

T

Symbol

Parameter and Test Condition

Units

Min.

Typ.

Max.

Std Dev.

Power Gain (|S

dB

17.5

19.0

∆Gp

Power Gain Flatness,

f = 0.1 ~ 1.5 GHz

dB

1.0

f = 0.1 ~ 2.5 GHz

3.0

Noise Figure

dB

3.5

4.4

Output Power at 1dB Gain Compression

dBm

8.4

Output Third Order Intercept Point

dBm

19.5

[1]

Input VSWR

<1.5

VSWR

out

[1]

Output VSWR

<1.5

Device Current

mA

37

42.5

Group Delay

ps

140

Notes:

1. Measurements taken on 50

Ω test board shown on Figure 1. Excess circuit losses had been de-embedded from actual measurements. Standard

deviation and typical data based on at least 500 parts sample size from 2 wafer lots. Future wafers allocated to this product may have nominal values

anywhere within the upper and lower spec limits.

Figure 1. ABA-32563 Production Test Circuit.

θ

RF Outp

F Input

Vcc

100 pF

1000 pF

RFC

33 nH

1 nF

1 nF