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PNA1401LF Fiches technique(PDF) 1 Page - Panasonic Semiconductor

No de pièce PNA1401LF
Description  Silicon NPN Phototransistors
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Fabricant  PANASONIC [Panasonic Semiconductor]
Site Internet  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

PNA1401LF Fiches technique(HTML) 1 Page - Panasonic Semiconductor

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Features
Flat window design which is suited to optical systems
Low dark current : ICEO = 5 nA (typ.)
Fast response : tr, tf = 3 µs (typ.)
Wide directional sensitivity
Base pin for easy circuit design (PNZ102F)
Phototransistors
PNA1401LF, PNZ102F
Silicon NPN Phototransistors
For optical control systems
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol
Ratings
Unit
Collector to emitter voltage
VCEO
30
V
Collector to base voltage
VCBO*
40
V
Emitter to collector voltage
VECO
5V
Emitter to base voltage
VEBO*
5V
Collector current
IC
50
mA
Collector power dissipation
PC
150
mW
Operating ambient temperature
Topr
–25 to +85
˚C
Storage temperature
Tstg
–30 to +100
˚C
* PNZ102F only
1: Emitter
2: Collector
Unit : mm
ø4.6
±0.15
Glass window
2.54
±0.25
ø5.75 max.
2-ø0.45
±0.05
1
2
PNA1401LF
1: Emitter
2: Base
3: Collector
Unit : mm
ø4.6
±0.15
Glass window
2.54
±0.25
ø5.75 max.
3-ø0.45
±0.05
1
3
2
PNZ102F


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