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STQ1HNK60R Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce STQ1HNK60R
Description  N-CHANNEL 600V - 8-ohm - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH-TM MOSFET
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STQ1HNK60R Fiches technique(HTML) 3 Page - STMicroelectronics

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STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Table 8: Source Drain Diode
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS = 15 V, ID= 0.5 A
1
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
156
23.5
3.8
pF
pF
pF
td(on)
tr
td(off)
tr
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 300 V, ID = 0.5 A,
RG= 4.7 Ω, VGS = 10 V
(Resistive Load see, Figure
21)
6.5
5
19
25
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 480V, ID = 1 A,
VGS = 10V, RG= 4.7 Ω
(see, Figure 23)
7
1.1
3.7
10
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
1
4
A
A
VSD (1)
Forward On Voltage
ISD = 1.0 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 1.0 A, di/dt = 100 A/µs
VDD = 25V, Tj = 25°C
(see test circuit, Figure 22)
140
240
3.3
ns
µC
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 1.0 A, di/dt = 100 A/µs
VDD = 25V, Tj = 150°C
(see test circuit, Figure 22)
229
377
3.3
ns
µC
A


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