BTC3906N3 datasheet(1/4 Pages) CYSTEKEC

No de pièce	BTC3906N3

Description	General Purpose NPN Epitaxial Planar Transistor

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Fabricant	CYSTEKEC [Cystech Electonics Corp.]

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CYStech Electronics Corp.

Spec. No. : C208N3

Issued Date : 2002.05.11

Revised Date : 2005.01.12

Page No. : 1/4

BTC3906N3

CYStek Product Specification

General Purpose NPN Epitaxial Planar Transistor

BTC3906N3

Description

The BTC3906N3 is designed for general purpose applications requiring high breakdown voltage.

Features

• High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA)

• Complement to BTA1514N3

Symbol

Outline

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Collector-Base Voltage

VCBO

180

V

Collector-Emitter Voltage

VCEO

160

V

Emitter-Base Voltage

VEBO

6

V

Collector Current

IC

600

mA

Power Dissipation (TA=25

°C)

PD

225 (Note)

mW

Power Dissipation (TC=25

°C)

PD

560

mW

Thermal Resistance, Junction to Ambient (Note )

RθJA

556 (Note)

°C/W

Thermal Resistance, Junction to Case

RθJC

223

°C/W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

-55~+150

°C

Note : Free air condition.

BTC3906N3

SOT-23

B：Base

C：Collector

E：Emitter

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