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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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BTA1012E3 Fiches technique(PDF) 1 Page - Cystech Electonics Corp. |
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BTA1012E3 Fiches technique(HTML) 1 Page - Cystech Electonics Corp. |
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1 / 4 page  CYStech Electronics Corp. Spec. No. : C601E3 Issued Date : 2004.07.26 Revised Date : Page No. : 1/4 BTA1012E3 CYStek Product Specification Low Vcesat PNP Epitaxial Planar Transistor BTA1012E3 Features • Low VCE(sat), VCE(sat)=-0.4 V (typical), at IC / IB = -3A / -0.15A • Excellent DC current gain characteristics • Wide SOA Symbol Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V IC(DC) -5 Collector Current IC(Pulse) -8 *1 A Base Current IB -1 A Pd(TA=25℃) 2 Power Dissipation Pd(TC=25℃) 25 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : *1 . Single Pulse Pw=10ms BTA1012E3 TO-220AB B：Base C：Collector E：Emitter B C E |
Numéro de pièce similaire - BTA1012E3 |
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Description similaire - BTA1012E3 |
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