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IRFZ48ZPBF Fiches technique(PDF) 1 Page - International Rectifier

No de pièce IRFZ48ZPBF
Description  AUTOMOTIVE MOSFET
Download  12 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRFZ48ZPBF Fiches technique(HTML) 1 Page - International Rectifier

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07/19/04
www.irf.com
1
HEXFET® is a registered trademark of International Rectifier.
IRFZ48ZPbF
IRFZ48ZSPbF
IRFZ48ZLPbF
HEXFET® Power MOSFET
S
D
G
VDSS = 55V
RDS(on) = 11mΩ
ID = 61A
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
AUTOMOTIVE MOSFET
PD - 95574
Description
Specifically designed for Automotive applica-
tions, this HEXFET® Power MOSFET utilizes the
latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional
features of this design are a 175°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These
features combine to make this design an ex-
tremely efficient and reliable device for use in
Automotive applications and a wide variety of
other applications.
D2Pak
IRFZ48ZS
TO-220AB
IRFZ48Z
TO-262
IRFZ48ZL
Absolute Maximum Ratings
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (See Fig. 9)
IDM
Pulsed Drain Current
c
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
EAS (tested)
Single Pulse Avalanche Energy Tested Value
i
IAR
Avalanche Current
c
A
EAR
Repetitive Avalanche Energy
h
mJ
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.64
°C/W
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
RθJA
Junction-to-Ambient
–––
62
RθJA
Junction-to-Ambient (PCB Mount, steady state)
j
–––
40
Max.
61
43
240
10 lbf•in (1.1N•m)
91
0.61
± 20
73
120
See Fig.12a,12b,15,16
300 (1.6mm from case )
-55 to + 175


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