TC58NVG1S3BFT00 datasheet(3/37 Pages) TOSHIBA

No de pièce	TC58NVG1S3BFT00

Description	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

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Fabricant	TOSHIBA [Toshiba Semiconductor]

Site Internet	http://www.semicon.toshiba.co.jp/eng

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TC58NVG1S3BFT00/TC58NVG1S8BFT00

2003-10-30A

3

BLOCK DIAGRAM

ABSOLUTE MAXIMUM RATINGS

SYMBOL

RATING

VALUE

UNIT

VCC

Power Supply Voltage

−0.6 to 4.6

V

VIN

Input Voltage

−0.6 to 4.6

V

VI/O

Input /Output Voltage

−0.6 V to VCC + 0.3 V (≤ 4.6 V)

V

PD

Power Dissipation

0.3

W

TSOLDER

Soldering Temperature (10 s)

260

°C

TSTG

Storage Temperature

−55 to 150

°C

TOPR

Operating Temperature

0 to 70

°C

CAPACITANCE *(Ta = 25°C, f = 1 MHz)

SYMB0L

PARAMETER

CONDITION

MIN

MAX

UNIT

CIN

Input

VIN = 0 V



10

pF

COUT

Output

VOUT = 0 V



10

pF

*

This parameter is periodically sampled and is not tested for every device.

I/O

Control circuit

Status register

Address register

Command register

Column buffer

Column decoder

Data register

Sense amp

Memory cell array

Control circuit

HV generator

Logic control

BY

/

RY

VCC

I/O1

VSS

I/O8

PSL

CE

CLE

ALE

WE

RE

BY

/

RY

I/O16

to

or

WP

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