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LN175 Fiches technique(PDF) 2 Page - Panasonic Semiconductor

No de pièce LN175
Description  GaAlAs Infrared Light Emitting Diode
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Fabricant  PANASONIC [Panasonic Semiconductor]
Site Internet  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

LN175 Fiches technique(HTML) 2 Page - Panasonic Semiconductor

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Infrared Light Emitting Diodes
LN175
IFP — Duty cycle
10 2
10
1
10 –1
Duty cycle (%)
110
10 2
10 –2
10 –1
tw = 10µs
Ta = 25˚C
IF — Ta
120
100
80
60
40
20
Ambient temperature
Ta (˚C )
0
20406080
100
0
– 25
IFP — VF
10
1
10 –1
Forward voltage
V
F (V)
10 –2
0
tw = 10µs
f = 100Hz
Ta = 25˚C
135
24
∆P
O — Ta
10
1
Ambient temperature
Ta (˚C )
IF = 100mA
– 40
0
40
80
10 –1
λ
P — Ta
960
940
920
900
880
860
Ambient temperature
Ta (˚C )
IF = 100mA
– 40
0
40
80
120
∆P
O — IFP
10 3
10 2
10
1
Pulse forward current
I
FP (A)
10
10 –2
10 –1
10 –3
10 –2
10 –1
1
(1) tw = 10µs
f = 100Hz
(2) DC
Ta = 25˚C
VF — Ta
1.6
1.2
0.8
0.4
0
Ambient temperature
Ta (˚C )
– 40
0
40
80
120
IF = 100mA
10mA
1mA
Spectral characteristics
100
80
60
40
20
Wavelength
λ (nm)
820
860
900
940
980
1020
0
780
IF = 100mA
Ta = 25˚C
Directivity characteristics
10˚
20˚
30˚
40˚
50˚
60˚
70˚
80˚
90˚
100˚
110˚
120˚
130˚
100
150
50
(1)
(2)


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