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LN175 Fiches technique(PDF) 1 Page - Panasonic Semiconductor |
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LN175 Fiches technique(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page 1 Infrared Light Emitting Diodes 1: Cathode 2: Anode Unit : mm 0.8 ±0.1 4.5 ±0.15 2.54 0.45 ±0.15 2-0.45 ±0.15 2-1.2 ±0.3 1.6 ±0.15 2.1 ±0.15 12 3.5 ±0.15 Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Conditions min typ max Unit Radiant power PO IF = 100mA 7 12 mW Peak emission wavelength λ P IF = 100mA 900 nm Spectral half band width ∆λ IF = 100mA 70 nm Forward voltage (DC) VF IF = 100mA 1.4 1.7 V Reverse current (DC) IR VR = 3V 10 µA Capacitance between pins Ct VR = 0V, f = 1MHz 50 pF Response time tr, tf IF = 100mA 700 ns Half-power angle θ The angle in which radiant intencity is 50% 120 deg. Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit Power dissipation PD 170 mW Forward current (DC) IF 100 mA Pulse forward current IFP* 2A Reverse voltage (DC) VR 3V Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg – 40 to +100 ˚C * f = 100 Hz, Duty cycle = 0.1 % LN175 GaAlAs Infrared Light Emitting Diode For optical control systems Features High-power output, high-efficiency : PO = 12 mW (typ.) Emitted light spectrum suited for silicon photodetectors : λ P = 900 nm (typ.) Good radiant power output linearity with respect to input current Wide directivity : θ = 120 deg. (typ.) |
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Description similaire - LN175 |
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