AO8816 datasheet(1/4 Pages) AOSMD

No de pièce	AO8816

Description	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

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Fabricant	AOSMD [Alpha & Omega Semiconductors]

Site Internet	http://www.aosmd.com

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Symbol

VDS

VGS

IDM

TJ, TSTG

Symbol

Typ

Max

64

83

89

120

RθJL

53

70

W

Maximum Junction-to-Lead

C

Steady-State

°C/W

Thermal Characteristics

Parameter

Units

Maximum Junction-to-Ambient

A

t ≤ 10s

RθJA

°C/W

Maximum Junction-to-Ambient

A

Steady-State

°C/W

±12

Gate-Source Voltage

Drain-Source Voltage

30

Continuous Drain

Current

A

Maximum

Units

Parameter

TA=25°C

TA=70°C

Absolute Maximum Ratings TA=25°C unless otherwise noted

V

6

30

Pulsed Drain Current

B

Power Dissipation

A

TA=25°C

Junction and Storage Temperature Range

A

PD

°C

1.5

1

-55 to 150

TA=70°C

ID

8

AO8816

Common-Drain Dual N-Channel Enhancement Mode Field

Effect Transistor

Features

VDS (V) = 30V

ID = 8 A (VGS = 10V)

RDS(ON) < 15mΩ (VGS = 10V)

RDS(ON) < 17mΩ (VGS = 4.5)

RDS(ON) < 23mΩ (VGS = 2.5V)

General Description

The AO8816 uses advanced trench technology to

provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a load switch or in PWM

applications. Standard Product AO8816 is Pb-free

(meets ROHS & Sony 259 specifications). AO8816L

is a Green Product ordering option. AO8816 and

AO8816L are electrically identical.

G1

S1

D1/D2

G2

S2

D1/D2

1

2

3

4

8

7

6

5

TSSOP-8

Top View

G1

D1

S1

G2

D2

S2

Alpha & Omega Semiconductor, Ltd.

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