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BAS21SLT1G Fiches technique(PDF) 1 Page - ON Semiconductor |
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BAS21SLT1G Fiches technique(HTML) 1 Page - ON Semiconductor |
1 / 4 page © Semiconductor Components Industries, LLC, 2004 May, 2004 − Rev. 4 1 Publication Order Number: BAS21SLT1/D BAS21SLT1 Preferred Device Dual Series High Voltage Switching Diode Features • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: Class 1 ESD Rating − Machine Model: Class B • Pb−Free Package is Available MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 250 Vdc Repetitive Peak Reverse Voltage VRRM 250 Vdc Peak Forward Current IF 225 mAdc Peak Forward Surge Current IFM(surge) 625 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25 °C PD 225 1.8 mW mW/ °C Thermal Resistance, Junction to Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25 °C PD 300 2.4 mW mW/ °C Thermal Resistance, Junction to Ambient RqJA 417 °C/W Junction and Storage Temperature Range TJ, Tstg − 55 to +150 °C 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Device Package Shipping† ORDERING INFORMATION SOT−23 CASE 318 STYLE 11 BAS21SLT1 SOT−23 3000/Tape & Reel MARKING DIAGRAM JT M JT = Device Code M = Date Code 1 2 3 Preferred devices are recommended choices for future use and best overall value. 3 CATHODE/ANODE ANODE 1 CATHODE 2 http://onsemi.com †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. BAS21SLT1G SOT−23 (Pb−Free) 3000/Tape & Reel |
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