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KM62V256CLRG-10L Fiches technique(PDF) 11 Page - Samsung semiconductor |
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KM62V256CLRG-10L Fiches technique(HTML) 11 Page - Samsung semiconductor |
11 / 12 page ELECTRONICS KM62V256C, KM62U256C Family CMOS SRAM Revision 04 April 1996 - 11 - TECHNICAL INFORMATION All the values in this graph are depicted by the relative value with the maximum value measured at 3.3V Vcc and -40° Ctemperature. The basic relative value of Icc2 at that condition is set into 1. All the values in this graph are depicted by the relative value with the maximum value measured at 3.0V Vcc and 85° Ctemperature. The basic relative value of Isb1 at that condition is set into 1. Icc2 v.s Temperature 0.500 0.600 0.700 0.800 0.900 1.000 -40 -10 0 25 40 70 85 Temerature( ¡ É ) 3.0V Device 3.3V Device Isb1 v.s Temperature 0.00 0.20 0.40 0.60 0.80 1.00 -40 -10 0 25 40 70 85 Temperature( ¡ É ) 2.7V 3.0V 1) Icc2 characteristics by temperature variation 2) Isb1(CMOS Level Standby Current) characteristics by temperature variation |
Numéro de pièce similaire - KM62V256CLRG-10L |
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Description similaire - KM62V256CLRG-10L |
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