IRHMS67164 datasheet(1/8 Pages) IRF

No de pièce	IRHMS67164

Description	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

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Fabricant	IRF [International Rectifier]

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Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 12V, TC = 25°C

Continuous Drain Current

45*

ID @ VGS = 12V, TC = 100°C Continuous Drain Current

44

IDM

Pulsed Drain Current

À

180

PD @ TC = 25°C

Max. Power Dissipation

208

W

Linear Derating Factor

1.67

W/°C

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy

Á

353

mJ

IAR

Avalanche Current

À

45

A

EAR

Repetitive Avalanche Energy

À

20.8

mJ

dv/dt

Peak Diode Recovery dv/dt

Â

8.2

V/ns

TJ

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Lead Temperature

300 (0.063 in. /1.6 mm from case for 10s)

Weight

9.3 (Typical)

g

oC

A

12/22/05

www.irf.com

1

* Current is limited by package

For footnotes refer to the last page

Pre-Irradiation

TO-254AA

Low-Ohmic

Features:

n Low RDS(on)

n Fast Switching

n

Single Event Effect (SEE) Hardened

n Low Total Gate Charge

n

Simple Drive Requirements

n

Ease of Paralleling

n

Hermetically Sealed

n Ceramic Eyelets

n

Electrically Isolated

n Light Weight

TECHNOLOGY

RADIATION HARDENED

IRHMS67164

POWER MOSFET

150V, N-CHANNEL

THRU-HOLE (Low-Ohmic TO-254AA)

International Rectifier’s R6TM technology provides

superior power MOSFETs for space applications.

These devices have improved immunity to Single

Event Effect (SEE) and have been characterized for

useful performance with Linear Energy Transfer

(LET) up to 90MeV/(mg/cm2).

Their combination of very low RDS(on) and faster

switching times reduces power loss and increases

power density in today’s high speed switching

applications such as DC-DC converters and motor

controllers. These devices retain all of the well

established advantages of MOSFETs such as voltage

control, ease of paralleling and temperature stability

of electrical parameters.

Product Summary

Part Number

Radiation Level RDS(on)

ID

IRHMS67164

100K Rads (Si)

0.019

Ω 45A*

IRHMS63164

300K Rads (Si)

0.019

Ω 45A*

PD-96958

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