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STGW30NC120HD Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce STGW30NC120HD
Description  N-CHANNEL 30A - 1200V - TO-247 VERY FAST PowerMESH-TM IGBT
Download  9 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGW30NC120HD Fiches technique(HTML) 3 Page - STMicroelectronics

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STGW30NC120HD
2 Electrical characteristics
3/9
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 3.
Static
Table 4.
Dynamic
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VBR(CES)
Collectro-Emitter Breakdown
Voltage
IC = 250µA, VGE = 0
1200
V
VCE(SAT)
Collector-Emitter Saturation
Voltage
VGE= 15V, IC= 20A, Tj= 25°C
VGE= 15V, IC= 20A, Tj= 125°C
2.4
2
2.9
V
V
VGE(th)
Gate Threshold Voltage
VCE= VGE, IC= 250µA
57
V
ICES
Collector-Emitter Leakage
Current (VCE = 0)
VGE =Max Rating,Tc=25°C
VGE =Max Rating, Tc=125°C
10
100
µA
µA
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE =± 20V , VCE = 0
± 100
nA
gfs
Forward Transconductance
VCE = 25V, IC= 25A
TBD
S
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 25V, f = 1 MHz, VGE = 0
TBD
TBD
TBD
pF
pF
pF
Qg
Qge
Qgc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE =960V, IC=20A,VGE =15V
TBD
TBD
TBD
TBD
nC
nC
nC


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