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STGW39NC60VD Fiches technique(PDF) 2 Page - STMicroelectronics |
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STGW39NC60VD Fiches technique(HTML) 2 Page - STMicroelectronics |
2 / 10 page STGW39NC60VD 2/10 Table 3: Absolute Maximum ratings (1)Pulse width limited by max. junction temperature. Table 4: Thermal Data ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 5: Off Table 6: On (#) Calculated according to the iterative formula: Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Reverse Battery Protection 20 V VGE Gate-Emitter Voltage ± 20 V IC Collector Current (continuous) at 25°C (#) 70 A IC Collector Current (continuous) at 100°C (#) 40 A ICM (1) Collector Current (pulsed) 100 A If Diode RMS Forward Current at Tc = 25°C 40 A PTOT Total Dissipation at TC = 25°C 215 W Derating Factor 1.72 W/°C Tstg Storage Temperature – 55 to 150 °C Tj Operating Junction Temperature Min. Typ. Max. Unit Rthj-case Thermal Resistance Junction-case 0.58 °C/W Rthj-case Thermal Resistance Junction-case (Diode) 1.5 °C/W Rthj-amb Thermal Resistance Junction-ambient 50 °C/W TL Maximum Lead Temperature for Soldering Purpose (1.6 mm from case, for 10 sec.) 300 °C Symbol Parameter Test Conditions Min. Typ. Max. Unit VBR(CES) Collectro-Emitter Breakdown Voltage IC = 1mA, VGE = 0 600 V ICES Collector-Emitter Leakage Current (VCE = 0) VGE = Max Rating, Tc=25°C Tc=125°C 10 1 µA mA IGES Gate-Emitter Leakage Current (VCE = 0) VGE = ± 20V , VCE = 0 ± 100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGE(th) Gate Threshold Voltage VCE= VGE, IC= 250µA 3.75 5.75 V VCE(SAT) Collector-Emitter Saturation Voltage VGE= 15V, IC= 30A, Tj= 25°C VGE= 15V, IC= 30A, Tj= 125°C 1.8 1.7 2.5 V V I C T C () T JMAX T C – R THJ C – V CE SAT M AX () TC IC , () × -------------------------------------------------------------------------------------------------- = |
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