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TD62002APG Fiches technique(PDF) 2 Page - Toshiba Semiconductor |
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TD62002APG Fiches technique(HTML) 2 Page - Toshiba Semiconductor |
2 / 13 page TD62001~004APG/AFG 2002-12-11 2 Schematics (each driver) TD62001APG/AFG TD62002APG/AFG TD62003PAPG/AFG TD62004APG/AFG Note: The input and output parasitic diodes cannot be used as clamp diodes. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Output sustaining voltage VCE (SUS) -0.5 to 50 V Output current IOUT 500 mA/ch Input voltage VIN (Note 1) -0.5 to 30 V Input current IIN (Note 2) 25 mA Clamp diode reverse voltage VR 50 V Clamp diode forward current IF 500 mA APG 1.47 Power dissipation AFG PD 0.625 (Note 3) W Operating temperature Topr -40 to 85 °C Storage temperature Tstg -55 to 150 °C Note 1: Except TD62001APG/AFG Note 2: Only TD62001APG/AFG Note 3: When mounted on a glass-epoxy PCB (30 mm ´ 30 mm ´ 1.6 mm, Cu area: 50%) |
Numéro de pièce similaire - TD62002APG |
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Description similaire - TD62002APG |
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