2SK3064 datasheet(1/2 Pages) PANASONIC

No de pièce	2SK3064

Description	Silicon N-Channel MOS FET

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Fabricant	PANASONIC [Panasonic Semiconductor]

Site Internet	http://www.panasonic.com/industrial/

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Silicon MOS FETs (Small Signal)

unit: mm

Marking Symbol: 2D

1: Gate

2: Source

EIAJ: SC-70

3: Drain

S-Mini Type Package (3-pin)

2.1±0.1

1.25±0.1

0.425

1

3

2

0.2±0.1

2SK3064

Silicon N-Channel MOS FET

Secondary battery pack (Li ion battery, etc.)

For switching

s Features

q High-speed switching

q S-mini type package, allowing downsizing of the sets and auto-

matic insertion through the tape/magazine packing.

q Low-voltage drive (V

th: −1 to 2V)

q Low Ron

s Absolute Maximum Ratings (Ta = 25°C)

Parameter

Drain to Source voltage

Gate to Source voltage

Drain current

Max drain current

Allowable power dissipation

Channel temperature

Storage temperature

Symbol

VDS

VGSO

ID

IDP

PD

Tch

Tstg

Ratings

30

±20

100

200

150

−55 to +150

Unit

V

mA

mW

°C

s Electrical Characteristics (Ta = 25°C)

Parameter

Drain current

Gate cut-off current

Gate threshold voltage

Forward transfer admittance

Drain to source ON-resistance

Turn-on time

Turn-off time

Symbol

IDSS

IGSS

Vth

| Yfs |

RDS(on)

ton

toff

Conditions

VDS = 30V, VGS = 0

VGS = ±20V, VDS = 0

VDS = 5V, ID = 1µA

VDS = 5V, ID = 10mA

VDD = 5V, VGS = 0 to 5V, RL = 200Ω

min

1

15

typ

30

150

35

Unit

µA

V

mS

Ω

ns

max

0.1

±1

2

50

Numéro de pièce similaire - 2SK3064

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