 |
Moteur de recherche de fiches techniques de composants électroniques |
|
|
Moteur de recherche de fiches techniques de composants électroniques |
|
2SK3025 Fiches technique(PDF) 1 Page - Panasonic Semiconductor |
|
||||||||||||||||||||||||||||||
2SK3025 Fiches technique(HTML) 1 Page - Panasonic Semiconductor |
|
|
1 / 1 page  1 Power F-MOS FETs unit: mm 2SK3025 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 1: Gate 2: Drain 3: Source U Type Package s Electrical Characteristics (T C = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Input capacitance (Common Source) Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Thermal resistance between channel and case Thermal resistance between channel and atmosphere Symbol IDSS IGSS VDSS Vth RDS(on)1 RDS(on)2 | Yfs | VDSF Ciss Coss Crss td(on) tr tf td(off) Rth(ch-c) Rth(ch-a) Conditions VDS = 50V, VGS = 0 VGS = ±20V, VDS = 0 ID = 1mA, VGS = 0 VDS = 10V, ID = 1mA VGS = 10V, ID = 15A VGS = 4V, ID = 15A VDS = 10V, ID = 15A IDR = 15A, VGS = 0 VDS = 10V, VGS = 0, f = 1MHz VDD = 30V, ID = 15A VGS = 10V, RL = 2Ω min 60 1 9 typ 25 35 18 1200 400 200 10 20 140 350 max 10 ±10 2.5 40 55 −1.5 6.25 125 Unit µA µA V V m Ω m Ω S V pF pF pF ns ns ns ns °C/W °C/W s Absolute Maximum Ratings (T C = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature DC Pulse TC = 25°C Ta = 25°C Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 60 ±20 ±30 ±60 45 20 1 150 −55 to +150 Unit V V A A mJ W °C °C * L = 0.1mH, IL = 30A, 1 pulse Internal Connection 6.5±0.1 5.3±0.1 4.35±0.1 4.6±0.1 2.3±0.1 0.75±0.1 123 0.93±0.1 2.3±0.1 0.5±0.1 0.5±0.1 0.1±0.05 1.0±0.1 G D S |
Numéro de pièce similaire - 2SK3025 |
|
Description similaire - 2SK3025 |
|
|
Lien URL |
| Politique de confidentialité |
| ALLDATASHEET.FR |
| ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
French ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
