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NE3508M04-A Fiches technique(PDF) 1 Page - California Eastern Labs |
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NE3508M04-A Fiches technique(HTML) 1 Page - California Eastern Labs |
1 / 11 page PRELIMINARY PRODUCT INFORMATION L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES - Super Low Noise Figure & Associated Gain : NF=0.45dB TYP. Ga=14dB TYP. @f=2GHz, VDS=2V, ID=10mA - Flat-lead 4-pin tin-type super mini-mold(M04) package (Pb-Free T. ) APPLICATIONS - Satellite Radio(SDARS, DMB, etc.) antenna LNA - LNA for Micro-wave communication system ORDERING INFORMATION Part Number Order Number Quantity Marking Supplying Form NE3508M04 NE3508M04-A 50pcs (Non reel) NE3508M04-T2 NE3508M04-T2-A 3 Kpcs/reel V79 - 8 mm wide emboss taping - Pin1(Source), Pin2(Drain) face the perforation side of the tape Remark To order evaluation samples, please contact your local NEC sales office. Part number for sample order: NE3508M04 ABSOLUTE MAXIMUM RATINGS ( TA =+ 25 °C ) PARAMETER SYMBOL RATINGS UNIT V e g a t l o V e c r u o S o t n i a r D DS V 0 . 4 V e g a t l o V e c r u o S o t e t a G GS V 0 . 3 - I t n e r r u C n i a r D D IDSS A m 0 0 4 G I t n e r r u C e t a G µA Total Power Dissipation Ptot Note W m 5 7 1 T e r u t a r e p m e T l e n n a h C ch +150 °C T e r u t a r e p m e T e g a r o t S stg - 65 to +150 °C Note Mounted on 1.08cm 2 X 1.0mm(t) glass epoxy PCB Caution : Observe precautions when handling because these devices are sensitive to electrostatic discharge. HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3508M04 Document No. P*****EJ0V0PM00 (10th edition) © NEC Compound Semiconductor Devices 2005 Date Published October 2005 CP(K) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. |
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