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NE3508M04-A Fiches technique(PDF) 1 Page - California Eastern Labs

No de pièce NE3508M04-A
Description  HETERO JUNCTION FIELD EFFECT TRANSISITOR
Download  11 Pages
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Fabricant  CEL [California Eastern Labs]
Site Internet  http://www.cel.com
Logo CEL - California Eastern Labs

NE3508M04-A Fiches technique(HTML) 1 Page - California Eastern Labs

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PRELIMINARY PRODUCT INFORMATION
L to S BAND LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
- Super Low Noise Figure & Associated Gain :
NF=0.45dB TYP. Ga=14dB TYP. @f=2GHz, VDS=2V, ID=10mA
- Flat-lead 4-pin tin-type super mini-mold(M04) package (Pb-Free T. )
APPLICATIONS
- Satellite Radio(SDARS, DMB, etc.) antenna LNA
- LNA for Micro-wave communication system
ORDERING INFORMATION
Part Number
Order Number
Quantity
Marking
Supplying Form
NE3508M04
NE3508M04-A
50pcs (Non reel)
NE3508M04-T2
NE3508M04-T2-A
3 Kpcs/reel
V79
- 8 mm wide emboss taping
- Pin1(Source), Pin2(Drain)
face the perforation side of the tape
Remark To order evaluation samples, please contact your local NEC sales office.
Part number for sample order: NE3508M04
ABSOLUTE MAXIMUM RATINGS ( TA =+ 25
°C )
PARAMETER
SYMBOL
RATINGS
UNIT
V
e
g
a
t
l
o
V
e
c
r
u
o
S
o
t
n
i
a
r
D
DS
V
0
.
4
V
e
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a
t
l
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c
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u
o
S
o
t
e
t
a
G
GS
V
0
.
3
-
I
t
n
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r
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u
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n
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a
r
D
D
IDSS
A
m
0
0
4
G
I
t
n
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r
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t
a
G
µA
Total Power Dissipation
Ptot Note
W
m
5
7
1
T
e
r
u
t
a
r
e
p
m
e
T
l
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n
n
a
h
C
ch
+150
°C
T
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
S
stg
- 65 to +150
°C
Note Mounted on 1.08cm
2 X 1.0mm(t) glass epoxy PCB
Caution : Observe precautions when handling because these devices are sensitive to electrostatic discharge.
HETERO JUNCTION FIELD EFFECT TRANSISITOR
NE3508M04
Document No. P*****EJ0V0PM00 (10th edition)
© NEC Compound Semiconductor Devices 2005
Date Published October 2005 CP(K)
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.


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