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PEMD17 Fiches technique(PDF) 4 Page - NXP Semiconductors

No de pièce PEMD17
Description  NPN/PNP resistor-equipped transistors
Download  12 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PEMD17 Fiches technique(HTML) 4 Page - NXP Semiconductors

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© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 — 24 January 2005
4 of 12
Philips Semiconductors
PEMD17; PUMD17
NPN/PNP resistor-equipped transistors; R1 = 47 k
Ω, R2 = 22 kΩ
6.
Thermal characteristics
[1]
Device mounted on a FR4 printed-circuit board, single-sided copper, standard footprint.
[2]
Reflow soldering is the only recommended soldering method.
7.
Characteristics
Table 7:
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
Rth(j-a)
thermal resistance from
junction to ambient
Tamb ≤ 25 °C
SOT363
[1] -
-
625
K/W
SOT666
[1] [2] -
-
625
K/W
Per device
Rth(j-a)
thermal resistance from
junction to ambient
Tamb ≤ 25 °C
SOT363
[1] -
-
416
K/W
SOT666
[1] [2] -
-
416
K/W
Table 8:
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor; for the PNP transistor with negative polarity
ICBO
collector-base cut-off
current
VCB = 50 V; IE = 0 A
-
-
100
nA
ICEO
collector-emitter
cut-off current
VCE = 30 V; IB = 0 A
-
-
1
µA
VCE = 30 V; IB = 0 A;
Tj = 150 °C
--50
µA
IEBO
emitter-base cut-off
current
VEB = 5 V; IC = 0 A
-
-
110
µA
hFE
DC current gain
VCE = 5 V; IC = 5 mA
60
-
-
VCEsat
collector-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA
-
-
150
mV
VI(off)
off-state input voltage
VCE = 5 V; IC = 100 µA
-
1.7
1.2
V
VI(on)
on-state input voltage
VCE = 0.3 V; IC = 2 mA
4
2.7
-
V
R1
bias resistor 1 (input)
33
47
61
k
R2/R1
bias resistor ratio
0.37
0.47
0.57
Cc
collector capacitance
VCB = −10 V; IE = ie = 0 A;
f=1MHz
TR1 (NPN)
-
-
2.5
pF
TR2 (PNP)
-
-
3
pF


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