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PEMD17 Fiches technique(PDF) 4 Page - NXP Semiconductors |
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PEMD17 Fiches technique(HTML) 4 Page - NXP Semiconductors |
4 / 12 page 9397 750 14367 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 03 — 24 January 2005 4 of 12 Philips Semiconductors PEMD17; PUMD17 NPN/PNP resistor-equipped transistors; R1 = 47 k Ω, R2 = 22 kΩ 6. Thermal characteristics [1] Device mounted on a FR4 printed-circuit board, single-sided copper, standard footprint. [2] Reflow soldering is the only recommended soldering method. 7. Characteristics Table 7: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per transistor Rth(j-a) thermal resistance from junction to ambient Tamb ≤ 25 °C SOT363 [1] - - 625 K/W SOT666 [1] [2] - - 625 K/W Per device Rth(j-a) thermal resistance from junction to ambient Tamb ≤ 25 °C SOT363 [1] - - 416 K/W SOT666 [1] [2] - - 416 K/W Table 8: Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per transistor; for the PNP transistor with negative polarity ICBO collector-base cut-off current VCB = 50 V; IE = 0 A - - 100 nA ICEO collector-emitter cut-off current VCE = 30 V; IB = 0 A - - 1 µA VCE = 30 V; IB = 0 A; Tj = 150 °C --50 µA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A - - 110 µA hFE DC current gain VCE = 5 V; IC = 5 mA 60 - - VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - - 150 mV VI(off) off-state input voltage VCE = 5 V; IC = 100 µA - 1.7 1.2 V VI(on) on-state input voltage VCE = 0.3 V; IC = 2 mA 4 2.7 - V R1 bias resistor 1 (input) 33 47 61 k Ω R2/R1 bias resistor ratio 0.37 0.47 0.57 Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f=1MHz TR1 (NPN) - - 2.5 pF TR2 (PNP) - - 3 pF |
Numéro de pièce similaire - PEMD17 |
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Description similaire - PEMD17 |
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