2SD2074 datasheet(1/2 Pages) PANASONIC

No de pièce	2SD2074

Description	Silicon NPN epitaxial planer type(For low-frequency output amplification)

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Fabricant	PANASONIC [Panasonic Semiconductor]

Site Internet	http://www.panasonic.com/industrial/

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1

Transistor

2SD2074

Silicon NPN epitaxial planer type

For low-frequency output amplification

For muting

For DC-DC converter

s Features

q

Low collector to emitter saturation voltage VCE(sat).

q

Low ON resistance Ron.

q

High foward current transfer ratio hFE.

q

Allowing supply with the radial taping.

s Absolute Maximum Ratings (Ta=25˚C)

Unit: mm

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Emitter

2:Collector

3:Base

MT2 Type Package

2.5

±0.1

2.5

±0.5 2.5±0.5

6.9

±0.1

1.05

±0.05

(1.45)

4.0

0.7

0.8

0.65 max.

0.45

+0.1

–0.05

3

2

1

Symbol

VCBO

VCEO

VEBO

ICP

IC

PC

Tj

Tstg

Ratings

25

20

12

1

0.5

1

150

–55 ~ +150

Unit

V

A

W

˚C

s Electrical Characteristics (Ta=25˚C)

Parameter

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Collector output capacitance

ON resistanse

Symbol

ICBO

VCBO

VCEO

VEBO

hFE1

*1

hFE2

VCE(sat)

VBE(sat)

fT

Cob

Ron

*3

Conditions

VCB = 25V, IE = 0

IC = 10µA, IE = 0

IC = 1mA, IB = 0

IE = 10µA, IC = 0

VCE = 2V, IC = 0.5A

*2

VCE = 2V, IC = 1A

*2

IC = 0.5A, IB = 20mA

IC = 0.5A, IB = 50mA

VCB = 10V, IE = –50mA, f = 200MHz

VCB = 10V, IE = 0, f= 1MHz

min

25

20

12

200

60

typ

0.13

200

10

1.0

max

100

800

0.4

1.2

Unit

nA

V

MHz

pF

Ω

*1h

FE1 Rank classification

Rank

R

S

T

hFE1

200 ~ 350

300 ~ 500

400 ~ 800

1.2

±0.1

0.65

max.

0.45 0.1

0.05

+

–

Note: In addition to the

lead type shown in

the upper figure, the

type as shown in

the lower figure is

also available.

(HW type)

*3R

on Measurement circuit

V

B

I

B=1mA

R

on=

!1000(

Ω)

f=1kHz

V=0.3V

1k

Ω

V

A

V

A–VB

V

B

*2 Pulse measurement

* Printed circuit board: Copper foil area of 1cm2 or more, and the board

thickness of 1.7mm for the collector portion

Numéro de pièce similaire - 2SD2074

Fabricant	No de pièce	Fiches technique	Description
Inchange Semiconductor ...	2SD207	262Kb / 2P	isc Silicon NPN Power Transistor
Toshiba Semiconductor	2SD2075	211Kb / 4P	NPN TRIPLE DIFFUSED TYPE (HIGH CURRENT SWITCHING, LAMP, SOLENOID DRIVE APPLICATIONS)
	2SD2075A	211Kb / 4P	NPN TRIPLE DIFFUSED TYPE (HIGH CURRENT SWITCHING, LAMP, SOLENOID DRIVE APPLICATIONS)
	2SD2079	205Kb / 4P	NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)
	2SD2079	151Kb / 5P	High-Power Switching Applications

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