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2SD2051 Fiches technique(PDF) 1 Page - Panasonic Semiconductor

No de pièce 2SD2051
Description  Silicon NPN epitaxial planar type Darlington(For low-frequency amplification)
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Fabricant  PANASONIC [Panasonic Semiconductor]
Site Internet  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SD2051 Fiches technique(HTML) 1 Page - Panasonic Semiconductor

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1
Power Transistors
2SD2051
Silicon NPN epitaxial planar type Darlington
For low-frequency amplification
s Features
q
High foward current transfer ratio hFE
q
Incorporating a built-in zener diode
q
Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (T
C=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
60
±10
60
±10
5
2.5
1.6
12
2.0
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (T
C=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Symbol
ICBO
IEBO
VCBO
VCEO
VEBO
hFE
*
VCE(sat)
VBE(sat)
fT
Conditions
VCB = 25V, IE = 0
VEB = 4V, IC = 0
IC = 100µA, IE = 0
IC = 1mA, IB = 0
IE = 100µA, IC = 0
VCE = 10V, IC = 1.0A
IC = 1.0A, IB = 1.0mA
IC = 1.0A, IB = 1.0mA
VCE = 10V, IC = 10mA, f = 200MHz
min
50
50
5
4000
200
typ
max
1
1
70
70
40000
1.5
2.2
Unit
µA
µA
V
V
V
V
V
MHz
*h
FE Rank classification
Rank
Q
R
S
hFE
4000 to 10000 8000 to 20000 16000 to 40000
TC=25°C
Ta=25
°C
Unit: mm
Internal Connection
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0
±0.2
5.5
±0.2
0.5
+0.2
–0.1
1.4
±0.1
1.3
±0.2
0.8
±0.1
2.54
±0.25
5.08
±0.5
2
13
2.7
±0.2
4.2
±0.2
φ3.1±0.1
B
E
C


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