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STP4N52K3 Fiches technique(PDF) 2 Page - VBsemi Electronics Co.,Ltd

No de pièce STP4N52K3
Description  N-Channel 650 V (D-S) MOSFET
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Fabricant  VBSEMI [VBsemi Electronics Co.,Ltd]
Site Internet  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

STP4N52K3 Fiches technique(HTML) 2 Page - VBsemi Electronics Co.,Ltd

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Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤ 300 µs; duty cycle ≤ 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.
d. t = 60 s, f = 60 Hz.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
RthJA
-65
°C/W
Maximum Junction-to-Case (Drain)
RthJC
-2.1
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
650
-
-
V
VDS Temperature Coefficient
ΔV
DS/TJ
Reference to 25 °C, ID = 1 mAd
-
670
-
mV/°C
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
2.5
-
4.5
V
Gate-Source Leakage
IGSS
VGS = ± 30 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 650 V, VGS = 0 V
-
-
25
µA
VDS = 520 V, VGS = 0 V, TJ = 125 °C
-
-
250
Drain-Source On-State Resistance
RDS(on)
VGS = 10 V
ID = 3.1 Ab
-
-
Ω
Forward Transconductance
gfs
VDS = 50 V, ID = 3.1 A
3.9
-
-
S
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
1017
-
pF
Output Capacitance
Coss
-
170
-
Reverse Transfer Capacitance
Crss
-7.0
-
Output Capacitance
Coss
VGS = 0 V
VDS = 1.0 V, f = 1.0 MHz
-
1912
-
VDS = 520 V, f = 1.0 MHz
-
48
-
Effective Output Capacitance
Coss eff.
VDS = 0 V to 520 Vc
-84
-
Total Gate Charge
Qg
VGS = 10 V
ID = 3.2 A, VDS = 400 V
see fig. 6 and 13b
--
48
nC
Gate-Source Charge
Qgs
--
12
Gate-Drain Charge
Qgd
--
19
Turn-On Delay Time
td(on)
VDD = 325 V, ID = 3.2 A
RG = 9.1 Ω, RD = 62 Ω,
see fig. 10b
-14
-
ns
Rise Time
tr
-20
-
Turn-Off Delay Time
td(off)
-34
-
Fall Time
tf
-18
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
--
4
A
Pulsed Diode Forward Currenta
ISM
--
21
Body Diode Voltage
VSD
TJ = 25 °C, IS = 3.2 A, VGS = 0 Vb
--
1.5
V
Body Diode Reverse Recovery Time
trr
TJ = 25 °C, IF = 3.2 A, dI/dt = 100 A/µsb
-
493
739
ns
Body Diode Reverse Recovery Charge
Qrr
-2.1
3.2
µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
S
D
G
7
1
.
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
STP4N52K3
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