Moteur de recherche de fiches techniques de composants électroniques
  French  ▼

Delete All
ON OFF
ALLDATASHEET.FR

X  

Preview PDF Download HTML

STM8450A Fiches technique(PDF) 1 Page - VBsemi Electronics Co.,Ltd

No de pièce STM8450A
Description  N- and P-Channel 60-V (D-S) MOSFET
Download  14 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  VBSEMI [VBsemi Electronics Co.,Ltd]
Site Internet  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

STM8450A Fiches technique(HTML) 1 Page - VBsemi Electronics Co.,Ltd

  STM8450A Datasheet HTML 1Page - VBsemi Electronics Co.,Ltd STM8450A Datasheet HTML 2Page - VBsemi Electronics Co.,Ltd STM8450A Datasheet HTML 3Page - VBsemi Electronics Co.,Ltd STM8450A Datasheet HTML 4Page - VBsemi Electronics Co.,Ltd STM8450A Datasheet HTML 5Page - VBsemi Electronics Co.,Ltd STM8450A Datasheet HTML 6Page - VBsemi Electronics Co.,Ltd STM8450A Datasheet HTML 7Page - VBsemi Electronics Co.,Ltd STM8450A Datasheet HTML 8Page - VBsemi Electronics Co.,Ltd STM8450A Datasheet HTML 9Page - VBsemi Electronics Co.,Ltd Next Button
Zoom Inzoom in Zoom Outzoom out
 1 / 14 page
background image
N- and P-Channel 60-V (D-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Available
TrenchFET® Power MOSFET
100 % Rg and UIS Tested
APPLICATIONS
CCFL Inverter
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
a
Qg (Typ.)
N-Channel
60
0.0
28 at V
GS = 10 V
5.3
6 nC
0.0
31 at V
GS = 4.5 V
4.7
P-Channel
- 60
0.
050 at V
GS = - 10 V
-
4.9
8 nC
0.
060 at V
GS = - 4.5 V
-
4.5
S1
D1
G1
D1
S2
D2
G2
D2
SO-8
5
6
7
8
2
3
4
1
N-Channel MOSFET
D1
G1
S1
S2
G2
D2
P-Channel MOSFET
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W for N-Channel and P-Channel.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
VDS
60
- 60
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
5.3
-
4.9
A
TC = 70 °C
4.3
-
4.2
TA = 25 °C
4.3b, c
-
4.0b, c
TA = 70 °C
3.4b, c
-
3.4b, c
Pulsed Drain Current (10 µs Pulse Width)
IDM
20
- 25
Source Drain Current Diode Current
TC = 25 °C
IS
2.6
- 2.8
TA = 25 °C
1.7b, c
- 1.7b, c
Pulsed Source-Drain Current
ISM
20
- 25
Single Pulse Avalanche Current
L = 0.1 mH
IAS
11
15
Single Pulse Avalanche Energy
EAS
6.1
11
mJ
Maximum Power Dissipation
TC = 25 °C
PD
3.1
3.4
W
TC = 70 °C
22.2
TA = 25 °C
2b, c
2b, c
TA = 70 °C
1.3b, c
1.3b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
N-Channel
P-Channel
Unit
Typ.
Max.
Typ.
Max.
Maximum Junction-to-Ambientb, d
t
≤ 10 s
RthJA
55
62.5
53
62.5
°C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
33
40
30
37
STM8450A
1
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw


Html Pages

1  2  3  4  5  6  7  8  9  10  11  12  13  14 


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn