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VS-100BGQ01 Fiches technique(PDF) 2 Page - Vishay Siliconix |
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VS-100BGQ01 Fiches technique(HTML) 2 Page - Vishay Siliconix |
2 / 7 page VS-100BGQ015 www.vishay.com Vishay Semiconductors Revision: 12-Jun-15 2 Document Number: 94578 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) Pulse width < 300 μs, duty cycle < 2 % ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS Forward voltage drop VFM (1) 50 A TJ = 25 °C 0.36 0.4 V 100 A 0.45 0.52 50 A TJ = 125 °C 0.27 0.31 100 A 0.39 0.45 Maximum reverse leakage current IRM (1) TJ = 100 °C, VR = 12 V 480 700 mA TJ = 125 °C, VR = 5 V 1 1.2 A TJ = 25 °C VR = Rated VR 718 mA TJ = 100 °C 580 870 Maximum junction capacitance CT VR = 5 VDC, (test signal range 100 kHz to 1 MHz), 25 °C 3800 pF Typical series inductance LS Measured from tab to mounting plane 3.5 nH Maximum voltage rate of change dV/dt Rated VR 10 000 V/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction temperature range TJ -55 to +125 °C Maximum storage temperature range TStg -55 to +150 Maximum thermal resistance, junction to case RthJC DC operation 0.50 °C/W Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased 0.30 Approximate weight 5g 0.18 oz. Mounting torque minimum 1.2 (10) N · m (lbf · in) maximum 2.4 (20) Marking device Case style PowerTab® 100BGQ015 |
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