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TRS8E65F Fiches technique(PDF) 2 Page - Toshiba Semiconductor |
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TRS8E65F Fiches technique(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page TRS8E65F 2 4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T Absolute Maximum Ratings (Note) (Unless otherwise specified, T Absolute Maximum Ratings (Note) (Unless otherwise specified, T Absolute Maximum Ratings (Note) (Unless otherwise specified, Taaaa = 25 = 25 = 25 = 25 )))) Characteristics Repetitive peak reverse voltage Forward DC current Forward pulse current Non-repetitive peak forward surge current I2t limit value Junction temperature Storage temperature Mounting torque Symbol VRRM IF(DC) IFP IFSM I2t Tj Tstg TOR Note (Note 1) (Note 2) Rating 650 8 80 69 23.8 175 -55 to 175 0.6 Unit V A A A A2s Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: t = 50 µs Note 2: f = 50 Hz (half-sine wave t = 10 ms) 5. 5. 5. 5. Thermal Characteristics Thermal Characteristics Thermal Characteristics Thermal Characteristics Characteristics Thermal resistance (junction-to-case) Thermal resistance (junction-to-ambient) Symbol Rth(j-c) Rth(j-a) Test Condition Max 1.8 89 Unit /W /W 6. 6. 6. 6. Electrical Characteristics (Unless otherwise specified, T Electrical Characteristics (Unless otherwise specified, T Electrical Characteristics (Unless otherwise specified, T Electrical Characteristics (Unless otherwise specified, Taaaa = 25 = 25 = 25 = 25 )))) Characteristics Forward voltage Forward voltage Reverse current Junction capacitance Symbol VF (1) VF (2) IR Cj Test Condition IF = 4 A (pulse measurement) IF = 8 A (pulse measurement) VR = 650 V (pulse measurement) VR = 650 V, f = 1 MHz Min Typ. 1.2 1.45 0.4 28 Max 1.6 40 Unit V V µA pF 2018-06-27 Rev.2.0 ©2016-2018 Toshiba Electronic Devices & Storage Corporation |
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