IRL7YS1404CM datasheet(4/7 Pages) IRF

No de pièce	IRL7YS1404CM

Description	HEXFET POWER MOSFET THRU-HOLE (Low-ohmic TO-257AA) 40V, N-CHANNEL

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Fabricant	IRF [International Rectifier]

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IRL7YS1404CM

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Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

1

10

100

0

2000

4000

6000

8000

10000

V

, Drain-to-Source Voltage (V)

DS

V

C

=

0V,

C

f = 1MHz

+ C

C

SHORTED

GS

iss

gs

gd ,

ds

rss

gd

oss

ds

gd

Ciss

Coss

Crss

0

50

100

150

200

250

0

4

8

12

16

20

Q , Total Gate Charge (nC)

G

FOR TEST CIRCUIT

SEE FIGURE

I =

D

13

20A

V

= 8V

DS

V

= 20V

DS

V

= 32V

DS

0.2

0.6

1.0

1.4

1.8

2.2

VSD , Source-to-Drain Voltage (V)

0.1

1

10

100

1000

VGS = 0V

TJ = 150°C

TJ = 25°C

0

1

10

100

VDS , Drain-toSource Voltage (V)

1

10

100

1000

Tc = 25°C

Tj = 150°C

Single Pulse

1ms

10ms

OPERATION IN THIS AREA

LIMITED BY RDS(on)

100µs

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IRL7YS1404CM Fiches technique(PDF) 4 Page - International Rectifier

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