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2SD0602A Datasheet(Fiches technique) 1 Page - Panasonic Semiconductor

Numéro de pièce 2SD0602A
Description  Silicon NPN epitaxial planer type
Télécharger  2 Pages
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Fabricant  PANASONIC [Panasonic Semiconductor]
Site Internet  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SD0602A Datasheet(HTML) 1 Page - Panasonic Semiconductor

  2SD0602A Datasheet HTML 1Page - Panasonic Semiconductor 2SD0602A Datenblatt HTML 2Page - Panasonic Semiconductor  
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Transistors
1
2SD0602A
Silicon NPN epitaxial planer type
For general amplification
Complementary to 2SB0710A
I Features
• Low collector to emitter saturation voltage V
CE(sat)
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I Absolute Maximum Ratings T
a = 25°C
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
50
V
Emitter to base voltage
VEBO
5V
Peak collector current
ICP
1A
Collector current
IC
500
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
I Electrical Characteristics T
a = 25°C ± 3°C
Marking Symbol: X
Note) *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
No-rank
hFE1
85 to 170
120 to 240
170 to 340
85 to 340
Marking symbol
XQ
XR
XS
X
Unit: mm
0.40
+0.10
–0.05
2
1
3
(0.95) (0.95)
1.9±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
10
°
1: Base
JEDEC: TO-236
2: Emitter
EIAJ: SC-59
3: Collector
Mini Type Package
Product of no-rank is not classified and have no indication for rank.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = 20 V, IE = 0
0.1
µA
Collector to base voltage
VCBO
IC
= 10 µA, I
E
= 060
V
Collector to emitter voltage
VCEO
IC
= 10 mA, I
B
= 050
V
Emitter to base voltage
VEBO
IE = 10 µA, IC = 05
V
Forward current transfer ratio *
1
hFE1 *
2
VCE
= 10 V, I
C
= 150 mA
85
340
hFE2
VCE
= 10 V, I
C
= 500 mA
40
Collector to emitter saturation voltage *
1
VCE(sat)
IC = 300 mA, IB = 30 mA
0.35
0.6
V
Transition frequency
fT
VCB
= 10 V, I
E
= −50 mA, f = 200 MHz
200
MHz
Collector output capacitance
Cob
VCB
= 10 V, I
E
= 0, f = 1 MHz
6
15
pF


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