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2SC5457 Fiches technique(PDF) 1 Page - Panasonic Semiconductor

No de pièce 2SC5457
Description  Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
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Fabricant  PANASONIC [Panasonic Semiconductor]
Site Internet  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SC5457 Fiches technique(HTML) 1 Page - Panasonic Semiconductor

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1
Power Transistors
2SC5457
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s Features
q
High-speed switching
q
High collector to base voltage VCBO
q
Wide area of safe operation (ASO)
q
Satisfactory linearity of foward current transfer ratio hFE
s Absolute Maximum Ratings (T
C=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCES
VCEO
VEBO
ICP
IC
IB
PC
Tj
Tstg
Ratings
500
500
400
7
6
3
1.2
30
1.0
150
–55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
s Electrical Characteristics (T
C=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
IEBO
VCEO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Conditions
VCB = 500V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 5V, IC = 0.1A
VCE = 2V, IC = 1.2A
IC = 1.5A, IB = 0.3A
IC = 1.5A, IB = 0.3A
VCE = 10V, IC = 0.2A, f = 1MHz
IC = 1.5A, IB1 = 0.15A, IB2 = – 0.3A,
VCC = 200V
min
400
10
8
typ
10
max
100
100
40
1.0
1.5
1.0
3.0
0.3
Unit
µA
µA
V
V
V
MHz
µs
µs
µs
TC=25°C
Ta=25
°C
Unit: mm
1:Base
2:Collector
3:Emitter
U Type Package
6.5
±0.1
5.3
±0.1
4.35
±0.1
4.6
±0.1
2.3
±0.1
0.75
±0.1
123
0.93
±0.1
2.3
±0.1
0.5
±0.1
0.5
±0.1
0.1
±0.05
1.0
±0.1
6.5
±0.2
2.3
5.35
4.35
0.75
0.6
3
2.3
2
1
0.5
±0.1
1:Base
2:Collector
3:Emitter
EIAJ:SC–63
U Type Package (Z)
Unit: mm


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