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TSZ02201-0S2S0CE00250-1-2

© 2012 ROHM Co., Ltd. All rights reserved.

21.Dec.2020 Rev.001

BD67891MUV

www.rohm.com

TSZ22111 • 15 • 001

24 V

OUT

VREGH

90 %

10 %

VREGL

OUT

0 V

90 %

10 %

Rise/Fall times

Parameter

Symbol

Limit

Unit

Condition

Min

Typ

Max

Driver block

<High side FET driver> (UHOUT, VHOUT, WHOUT)

Output transition time 1

-

60

200

ns

load = 1000 pF//3.8 MΩ

Output transition time 2

-

80

200

ns

<Low side FET driver> (ULOUT, VLOUT, WLOUT)

Output transition time 1

-

70

200

ns

load = 1000 pF//3.8 MΩ

Output transition time 2

-

70

200

ns

Lengthen the times by connecting external CR circuits as shown below.

xHOUT

IC

xLOUT

Regulator

V

MM

R2

R1

C1

C2

Protection Circuits

1

Thermal Shutdown (TSD)

A thermal shutdown circuit is built in for protection against overheating. When the chip temperature rises 175 °C (Typ)

or more, the output of pre-driver is controlled as the external FETs turns OFF. Normal operation automatically resumes

once the temperature decreases to 150 °C (Typ) or less. Note that if heat is externally added damage may occur, even

if TSD is in operation.

2

Under Voltage Lock Out (UVLO)

This IC has a built-in under voltage lock out function to prevent false operation such as IC output during power supply

under voltage. When the applied voltage to the VMM pin goes to 15 V (Typ) or less, the output of pre-driver is

controlled as the external FETs turn OFF. This switching voltage has 1 V (Typ) hysteresis to prevent false operation by

noise etc. Be aware that this circuit does not operate during power save mode.