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BD67891MUV Fiches technique(PDF) 9 Page - Rohm |
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BD67891MUV Fiches technique(HTML) 9 Page - Rohm |
9 / 20 page 9/15 TSZ02201-0S2S0CE00250-1-2 © 2012 ROHM Co., Ltd. All rights reserved. 21.Dec.2020 Rev.001 BD67891MUV www.rohm.com TSZ22111 • 15 • 001 24 V OUT VREGH 90 % 10 % tfH trH VREGL OUT 0 V 90 % 10 % trL tfL Rise/Fall times Parameter Symbol Limit Unit Condition Min Typ Max Driver block <High side FET driver> (UHOUT, VHOUT, WHOUT) Output transition time 1 trH - 60 200 ns load = 1000 pF//3.8 MΩ Output transition time 2 tfH - 80 200 ns <Low side FET driver> (ULOUT, VLOUT, WLOUT) Output transition time 1 trL - 70 200 ns load = 1000 pF//3.8 MΩ Output transition time 2 tfL - 70 200 ns Lengthen the times by connecting external CR circuits as shown below. xHOUT IC xLOUT Regulator V MM R2 R1 C1 C2 Protection Circuits 1 Thermal Shutdown (TSD) A thermal shutdown circuit is built in for protection against overheating. When the chip temperature rises 175 °C (Typ) or more, the output of pre-driver is controlled as the external FETs turns OFF. Normal operation automatically resumes once the temperature decreases to 150 °C (Typ) or less. Note that if heat is externally added damage may occur, even if TSD is in operation. 2 Under Voltage Lock Out (UVLO) This IC has a built-in under voltage lock out function to prevent false operation such as IC output during power supply under voltage. When the applied voltage to the VMM pin goes to 15 V (Typ) or less, the output of pre-driver is controlled as the external FETs turn OFF. This switching voltage has 1 V (Typ) hysteresis to prevent false operation by noise etc. Be aware that this circuit does not operate during power save mode. |
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