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TSP7N60S Datasheet(Fiches technique) 5 Page - VBsemi Electronics Co.,Ltd

Numéro de pièce TSP7N60S
Description  N-Channel 650V (D-S) Power MOSFET
Télécharger  10 Pages
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Fabricant  VBSEMI [VBsemi Electronics Co.,Ltd]
Site Internet  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

TSP7N60S Datasheet(HTML) 5 Page - VBsemi Electronics Co.,Ltd

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Fig. 12 - Switching Time Test Circuit
Fig. 13 - Switching Time Waveforms
Fig. 14 - Unclamped Inductive Test Circuit
Fig. 15 - Unclamped Inductive Waveforms
Fig. 16 - Basic Gate Charge Waveform
Fig. 17 - Gate Charge Test Circuit
Pulse width
≤ 1 µs
Duty factor
≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
10 V
+
-
V
DS
V
DD
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
R
G
IAS
0.01
Ω
tp
D.U.T
L
V
DS
+
-
V
DD
10 V
Vary tp to obtain
required IAS
IAS
VDS
VDD
VDS
tp
Q
GS
Q
GD
Q
G
VG
Charge
10 V
D.U.T.
3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 k
Ω
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
TSP7N60S
5


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