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2SC5121 Fiches technique(PDF) 1 Page - Panasonic Semiconductor

No de pièce 2SC5121
Description  Silicon NPN triple diffusion planar type
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Fabricant  PANASONIC [Panasonic Semiconductor]
Site Internet  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SC5121 Fiches technique(HTML) 1 Page - Panasonic Semiconductor

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1
Power Transistors
2SC5121
Silicon NPN triple diffusion planar type
For general amplification
s Features
q
High collector to base voltage VCBO
q
High collector to emitter VCEO
q
Small collector output capacitance Cob
q
TO-126 package, which is fitted to a heat sink without any insu-
lation parts
s Absolute Maximum Ratings (T
C=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
400
400
7
100
70
1.2
150
–55 to +150
Unit
V
V
V
mA
mA
W
˚C
˚C
s Electrical Characteristics (T
C=25˚C)
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
Hot ICEO
VCEO
VEBO
hFE
VCE(sat)
fT
Cob
Conditions
VCB = 300V, IE = 0
VCE = 380V, IB = 0, Ta = 80°C
IC = 100µA, IB = 0
IE = 1µA, IC = 0
VCE = 10V, IC = 5mA
IC = 50mA, IB = 5mA
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
min
400
7
30
50
typ
80
4
max
10
10
150
1.2
8
Unit
µA
µA
V
V
V
MHz
pF
Unit: mm
1:Emitter
2:Collector
3:Base
JEDEC:TO–126(b)
3.2
±0.2
0.5
±0.1
0.75
±0.1
0.5
±0.1
1.76
±0.1
8.0
+0.5
–0.1
1
4.6
±0.2
2.3
±0.2
3
2
φ3.16±0.1


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