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2SC4985 Fiches technique(PDF) 1 Page - Panasonic Semiconductor

No de pièce 2SC4985
Description  Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
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Fabricant  PANASONIC [Panasonic Semiconductor]
Site Internet  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SC4985 Fiches technique(HTML) 1 Page - Panasonic Semiconductor

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1
Power Transistors
2SC4985
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s Features
q
High collector to base voltage VCBO
q
High collector to emitter VCEO
q
Allowing automatic insertion with radial taping
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
900
800
7
2
1
1.5
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
IEBO
VCEO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Conditions
VCB = 900V, IE = 0
VEB = 7V, IC = 0
IC = 1mA, IB = 0
VCE = 5V, IC = 50mA
VCE = 5V, IC = 500mA
IC = 200mA, IB = 40mA
IC = 200mA, IB = 40mA
VCB = 10V, IE = –50mA, f = 200MHz
IC = 200mA, IB1 = 40mA, IB2 = –80mA,
VCC = 250V
min
800
6
3
typ
80
max
50
50
1.5
1
1
3
1
Unit
µA
µA
V
V
V
MHz
µs
µs
µs
Unit: mm
1:Emitter
2:Collector
3:Base
MT3 Type Package
7.5
±0.2
4.5
±0.2
90
°
0.8C
0.8C
0.4
±0.1
0.8C
123
0.5
±0.1
0.7
±0.1
1.0
±0.1
0.85
±0.1
0.65
±0.1
0.7
±0.1
2.5
±0.2
2.5
±0.2
2.05
±0.2


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