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2SC4898 Fiches technique(PDF) 1 Page - Panasonic Semiconductor

No de pièce 2SC4898
Description  Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
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Fabricant  PANASONIC [Panasonic Semiconductor]
Site Internet  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SC4898 Fiches technique(HTML) 1 Page - Panasonic Semiconductor

  2SC4898 Datasheet HTML 1Page - Panasonic Semiconductor 2SC4898 Datasheet HTML 2Page - Panasonic Semiconductor  
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1
Power Transistors
2SC4898
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s Features
q
High-speed switching
q
High collector to base voltage VCBO
q
Low collector to emitter saturation voltage VCE(sat)
s Absolute Maximum Ratings (T
C=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
ICP
IC
PC
Tj
Tstg
Ratings
1000
500
10
5
40
2
150
–55 to +150
Unit
V
V
A
A
W
˚C
˚C
TC=25°C
Ta=25
°C
s Electrical Characteristics (T
C=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
IEBO
hFE
VCE(sat)
fT
ton
tstg
tf
Conditions
VCB = 1000V, IE = 0
VEB = 9V, IC = 0
VCE = 5V, IC = 1A
IC = 3A, IB = 0.6A
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 3A, IB1 = 0.6A, IB2 = – 0.6A,
VCC = 250V
min
20
typ
8
max
100
100
40
1
1.5
3
1.0
Unit
µA
µA
V
MHz
µs
µs
µs
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220D Full Pack Package
1
9.9
±0.3
4.6
±0.2
2.9
±0.2
0.8
±0.1
1.4
±0.2
23
φ3.2±0.1
2.6
±0.1
0.55
±0.15
2.54
±0.3
5.08
±0.5
1.6
±0.2


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