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2SC4606 Fiches technique(PDF) 1 Page - Panasonic Semiconductor |
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2SC4606 Fiches technique(HTML) 1 Page - Panasonic Semiconductor |
1 / 3 page 1 Transistor 2SC4606 Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SA1762 s Features q High collector to emitter voltage VCEO. q Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. q M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. s Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Collector EIAJ:SC–71 3:Emitter M Type Mold Package 6.9 ±0.1 0.55 ±0.1 0.45 ±0.05 2.5 ±0.1 1.0 1.5 1.5 R0.9 R0.9 0.85 2.5 2.5 1 2 3 Symbol VCBO VCEO VEBO ICP IC PC * Tj Tstg Ratings 80 80 5 1 0.5 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C s Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO VCBO VCEO VEBO hFE1 *1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = 20V, IE = 0 IC = 10µA, IE = 0 IC = 100µA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 150mA *2 VCE = 5V, IC = 500mA *2 IC = 300mA, IB = 30mA *2 IC = 300mA, IB = 30mA *2 VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min 80 80 5 130 50 typ 100 0.2 0.85 120 11 max 0.1 330 0.4 1.2 20 Unit µA V V V V V MHz pF *1h FE1 Rank classification Rank R S hFE1 130 ~ 220 185 ~ 330 *2 Pulse measurement * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion |
Numéro de pièce similaire - 2SC4606 |
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Description similaire - 2SC4606 |
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