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FTK4N65P Datasheet(Fiches technique) 3 Page - First Silicon Co., Ltd

Numéro de pièce FTK4N65P
Description  4 Amps, 650 Volt N-CHANNEL POWER MOSFET
Télécharger  7 Pages
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Fabricant  FS [First Silicon Co., Ltd]
Site Internet  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK4N65P Datasheet(HTML) 3 Page - First Silicon Co., Ltd

  FTK4N65P Datenblatt HTML 1Page - First Silicon Co., Ltd FTK4N65P Datenblatt HTML 2Page - First Silicon Co., Ltd FTK4N65P Datasheet HTML 3Page - First Silicon Co., Ltd FTK4N65P Datenblatt HTML 4Page - First Silicon Co., Ltd FTK4N65P Datenblatt HTML 5Page - First Silicon Co., Ltd FTK4N65P Datenblatt HTML 6Page - First Silicon Co., Ltd FTK4N65P Datenblatt HTML 7Page - First Silicon Co., Ltd  
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2012. 07. 03
3/7
Revision No : 0
ELECTRICAL CHARACTERISTICS(Cont.)
VSD
VGS = 0 V, IS = 4.0 A
1.4
V
IS
3.6
ISM
14.4
tRR
350
ns
QRR
VGS = 0 V, IS = 4.0A,
dlF/dt =100 A/µs (Note 4)
2.1
µC
Note:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 15mH, IAS=3.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 7A, di/dt ≤ 300A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
UNIT
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
Maximum Pulsed Drain-Source Diode Forward
Current
Reverse Recovery Time
Reverse Recovery Charge
MAX
FTK4N65P/F/D/I
A
A


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