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FTK4N65P Datasheet(Fiches technique) 2 Page - First Silicon Co., Ltd

Numéro de pièce FTK4N65P
Description  4 Amps, 650 Volt N-CHANNEL POWER MOSFET
Télécharger  7 Pages
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Fabricant  FS [First Silicon Co., Ltd]
Site Internet  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK4N65P Datasheet(HTML) 2 Page - First Silicon Co., Ltd

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ABSOLUTE MAXIMUM RATINGS (TC= 25˚C, unless otherwise specified)
PARAMET
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
650
V
VDSS
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 1)
IAR
4.4
A
TC = 25°C
3.6
A
Continuous Drain Current
TC = 100°C
ID
2.3
Pulsed Drain Current (Note 1)
IDM
16
A
Single Pulse(Note 2)
EAS
150
mJ
Avalanche Energy
Repetitive Limited by TJ(MAX)
EAR
7.0
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
W
Total Power Dissipation
(TO-251/252/TO-220F/220)
PD
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TC = 25˚C , unless Otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
UNIT
OFF CHARACTERISTICS
650
V
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
VDS = 600V, VGS = 0V
1
µ
A
Drain-Source Leakage Current
IDSS
VDS = 480V, TC = 125°C
10
µ
A
Forward
VGS = 30V, VDS = 0V
100
nA
Gate-Source Leakage Current
Reverse
IGSS
VGS = -30V, VDS = 0V
-100
nA
Breakdown Voltage Temperature Coefficient ΔBVDSS / ΔTJ ID = 250
µ
A, Referenced to
25°C
0.7
V / ˚C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250µA
2.0
4.0
V
Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 2.0A
2.7
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
510
pF
Output Capacitance
COSS
60
pF
Reverse Transfer Capacitance
CRSS
VDS = 25V, VGS = 0V,
f = 1.0MHz
6.5
pF
2012. 07. 03
2/7
FTK4N65P/F/D/I
Revision No : 0
TSTG
-55 ~ +150
˚C
MAX
Storage Temperature
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
VDD = 325V, ID=3.6A, RG= 25Ω
(Note 4,5)
ns
Turn-On Rise Time
tR
15
ns
Turn-Off Fall Time
tF
15
ns
Total Gate Charge
QG
12
nC
Gate-Source Charge
QGS
VDS = 520V,ID = 3.6A, VGS =10V
(Note 4,5)
2.5
nC
Turn-Off Delay Time
Gate-Drain Charge
QGD
5.0
nC
tD(OFF)
Forward Transconductance
gFS
VDS = 50V, ID = 2.0A (Note 4)
1.9
S
20
45
ns
Junction Temperature
TJ
+150
˚C
TOPR
-55 ~ +150
˚C
Operating Temperature
Tc=25℃
45/45/31/62.5
W
Derate above 25°C
0.36/0.36/0.25/0.5


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