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FTK4N60P Datasheet(Fiches technique) 1 Page - First Silicon Co., Ltd

Numéro de pièce FTK4N60P
Description  4 Amps, 600 Volt N-CHANNEL POWER MOSFET
Télécharger  7 Pages
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Fabricant  FS [First Silicon Co., Ltd]
Site Internet  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK4N60P Datasheet(HTML) 1 Page - First Silicon Co., Ltd

  FTK4N60P Datasheet HTML 1Page - First Silicon Co., Ltd FTK4N60P Datenblatt HTML 2Page - First Silicon Co., Ltd FTK4N60P Datenblatt HTML 3Page - First Silicon Co., Ltd FTK4N60P Datenblatt HTML 4Page - First Silicon Co., Ltd FTK4N60P Datenblatt HTML 5Page - First Silicon Co., Ltd FTK4N60P Datenblatt HTML 6Page - First Silicon Co., Ltd FTK4N60P Datenblatt HTML 7Page - First Silicon Co., Ltd  
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1.Gate
3.Source
2.Drain
4 Amps, 600 Volt
N-CHANNEL POWER MOSFET
DESCRIPTION
The FTK 4N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) =
2.5Ω@V
GS = 10V
* Low reverse transfer Capacitance ( CRSS = typical 7.5 pF )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2008. 07. 10
1/7
SEMICONDUCTOR
TECHNICAL DATA
FTK4N60P / F / D / I
Revision No : 1
* Ultra low gate charge ( typical 10 nC )
Power MOSFET
TO - 220
1
TO - 252
TO - 251
1
1
1
TO - 220F
I :
D :
P :
F :
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
1
2
3
Packing
FTK4N60P
TO-220
G
D
S
Tube
FTK4N60F
TO-220F
G
D
S
Tube
FTK4N60I
TO-251
G
D
S
Tube
FTK4N60D
TO-252
G
D
S
Tape Reel
Note: Pin Assignment:
G: Gate
D: Drain
S: Source


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