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FTK4N60P Datasheet(Fiches technique) 7 Page - First Silicon Co., Ltd

Numéro de pièce FTK4N60P
Description  4 Amps, 600 Volt N-CHANNEL POWER MOSFET
Télécharger  7 Pages
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Fabricant  FS [First Silicon Co., Ltd]
Site Internet  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK4N60P Datasheet(HTML) 7 Page - First Silicon Co., Ltd

  FTK4N60P Datenblatt HTML 1Page - First Silicon Co., Ltd FTK4N60P Datenblatt HTML 2Page - First Silicon Co., Ltd FTK4N60P Datenblatt HTML 3Page - First Silicon Co., Ltd FTK4N60P Datenblatt HTML 4Page - First Silicon Co., Ltd FTK4N60P Datenblatt HTML 5Page - First Silicon Co., Ltd FTK4N60P Datenblatt HTML 6Page - First Silicon Co., Ltd FTK4N60P Datasheet HTML 7Page - First Silicon Co., Ltd  
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TYPICAL CHARACTERISTICS(Cont.)
Drain Current, ID (A)
On-Resistance Variation vs. Drain
Current and Gate Voltage
1
0.1
0.2
Source-Drain Voltage, VSD (V)
On State Current vs. Allowable Case
Temperature
1.8
0.4 0.6 0.8 1.0 1.2
1.6
1.4
10
150
˚C
25
˚C
Notes:
1. VGS = 0V
2. 250
μs Test
1200
0
0.1
Drain-SourceVoltage, VDS (V)
1000
200
1
10
Ciss
800
600
Notes:
1. VGS=0V
2. f = 1MHz
Ciss Cgs +Cgd (Cds=shorted )
Coss=Cds+Cgd Crss=Cgd
Capacitance Characteristics
(Non-Repetitive)
0
Total Gate Charge, QG (nC)
5
15
25
Note: ID = 4A
8
10
12
10
6
4
2
0
VDS=120V
VDS=300V
VDS=480V
20
Gate Charge Characteristics
Coss
Crss
400
Notes:
1
θ
J C (t) = 1 18
˚C/W Max
2 Duty Factor , D =t 1/t 2
3 TJM-TC=PDM×
θ
J C(t)
1
0.1
0.01
1E-5
1E-4 1E-3 0.01 0.1
1
10
Square Wave Pulse Duration, t1 (sec)
Transient Thermal Response
Curve
2008. 07. 10
7/7
FTK4N60P / F / D / I
Revision No : 1
Power MOSFET
6 0
5 0
3 0
2 0
1 0
0
4 0
4
0
2
3
8
1
56
7
VGS=10V
VGS=7V


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