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FTK4N60P Datasheet(Fiches technique) 6 Page - First Silicon Co., Ltd

Numéro de pièce FTK4N60P
Description  4 Amps, 600 Volt N-CHANNEL POWER MOSFET
Télécharger  7 Pages
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Fabricant  FS [First Silicon Co., Ltd]
Site Internet  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK4N60P Datasheet(HTML) 6 Page - First Silicon Co., Ltd

  FTK4N60P Datenblatt HTML 1Page - First Silicon Co., Ltd FTK4N60P Datenblatt HTML 2Page - First Silicon Co., Ltd FTK4N60P Datenblatt HTML 3Page - First Silicon Co., Ltd FTK4N60P Datenblatt HTML 4Page - First Silicon Co., Ltd FTK4N60P Datenblatt HTML 5Page - First Silicon Co., Ltd FTK4N60P Datasheet HTML 6Page - First Silicon Co., Ltd FTK4N60P Datenblatt HTML 7Page - First Silicon Co., Ltd  
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background image
-100
Junction Temperature, TJ (
˚C)
-50
50
200
100 150
1.2
0
1.1
1.0
0.9
0.8
Note:
1. VGS=0V
2. ID=250
μA
Breakdown Voltage Variation vs.
Temperature
Junction Temperature, TJ (
˚C)
On-Resistance Junction Temperature
10
1
0.1
Drain-Source Voltage,
VDS (V)
100
10
1
100
μs
1000
10ms
1ms
D
C
Operation in This Area is Limited by
R DS(on)
Maximum Safe Operating Area
Case Temperature, TJ (
˚C)
75
100
0
125
5
2
0
5
1
2
3
4
5
Maximum Drain
Current vs. Case
Temperature
Notes:
1 TJ = 25
˚C
2 TJ =150
˚C
3 Single Pulse
10
1
10
0.1
1
Drain-to-Source Voltage, VDS (V)
On-State
Characteristics
0.1
2
Gate-Source Voltage, VDS (V)
Transfer
Characteristics
4
6
8
10
150
˚C
Notes:
1. VDS =50V
2.
250
μs Pulse Test
10
1
0.1
25
˚C
5.0V
Notes:
1. 250
μs Pulse Test
2. TC=25
˚C
VGS
Top :
10V
9V
8V
7V
6V
5 5V
5V
Bottorm :5 0V
2008. 07. 10
6/7
FTK4N60P / F / D / I
Revision No : 1
Power MOSFET
TYPICAL CHARACTERISTICS
0
50
0
5
1
0
0
1
0
5
-
0
0
1
-
0.0
0.5
3.0
2.5
1.0
1.5
2.0
VGS =10V
IDS = 2.0A


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