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2SB792 Fiches technique(PDF) 1 Page - Panasonic Semiconductor |
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2SB792 Fiches technique(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page 1 Transistor 2SB792, 2SB792A Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD814 s Features q High collector to emitter voltage VCEO. q Low noise voltage NV. q Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. s Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Base JEDEC:TO–236 2:Emitter EIAJ:SC–59 3:Collector Mini Type Package 2.8 +0.2 –0.3 1.5 +0.25 –0.05 0.65 ±0.15 0.65 ±0.15 3 1 2 0.4 ±0.2 0.1 to 0.3 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –150 –185 –150 –185 –5 –100 –50 200 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 2SB792 2SB792A 2SB792 2SB792A s Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Noise voltage Symbol ICBO VCEO VEBO hFE * VCE(sat) fT Cob NV Conditions VCB = –100V, IE = 0 IC = –100µA, IB = 0 IE = –10µA, IC = 0 VCE = –5V, IC = –10mA IC = –30µA, IB = –3mA VCB = –10V, IE = 10mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz VCE = –10V, IC = –1mA, GV = 80dB, Rg = 100kΩ, Function = FLAT min –150 –185 –5 130 130 typ 200 4 150 max –1 450 330 –1 Unit µA V V V MHz pF mV Marking symbol : I(2SB792) 2F(2SB792A) *h FE Rank classification Rank R S T hFE 130 ~ 220 185 ~ 330 260 ~ 450 2SB792 IR IS IT 2SB792A 2FR 2FS — Marking Symbol 2SB792 2SB792A 2SB792 2SB792A |
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Description similaire - 2SB792 |
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