Moteur de recherche de fiches techniques de composants électroniques
  French  ▼

Delete All
ON OFF
ALLDATASHEET.FR

X  

Preview PDF Download HTML

2SC5954 Fiches technique(PDF) 1 Page - Panasonic Semiconductor

No de pièce 2SC5954
Description  Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio
Download  2 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  PANASONIC [Panasonic Semiconductor]
Site Internet  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SC5954 Fiches technique(HTML) 1 Page - Panasonic Semiconductor

  2SC5954 Datasheet HTML 1Page - Panasonic Semiconductor 2SC5954 Datasheet HTML 2Page - Panasonic Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 1 / 2 page
background image
Power Transistors
1
Publication date: July 2004
SJD00319AED
2SC5954
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
■ Features
• High forward current transfer ratio h
FE which has satisfactory linearity.
• Low collector-emitter saturation voltage V
CE(sat)
• Full-pack package which can be installed to the heat sink with one
screw.
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C = 25°C ± 3°C
1.4±0.2
1.6±0.2
0.8±0.1
0.55±0.15
2.54±0.30
5.08±0.50
12
3
2.6±0.1
2.9±0.2
4.6±0.2
φ 3.2±0.1
9.9±0.3
Unit: mm
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
80
V
Collector-emitter voltage (Base open)
VCEO
60
V
Emitter-base voltage (Collector open)
VEBO
6V
Collector current
IC
3A
Peak collector current
ICP
6A
Collector power dissipation
PC
25
W
Ta = 25°C
2.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 10 mA, IB = 060
V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 80 V, I
E
= 0
100
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = 40 V, IB = 0
100
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V, IC = 0
100
µA
Forward current transfer ratio
hFE1 *
VCE
= 4 V, I
C
= 0.5 A
500
2 300
hFE2
VCE = 4 V, IC = 3 A
100
Collector-emitter saturation voltage
VCE(sat)
IC = 1 A, IB = 20 mA
0.6
V
Transition frequency
fT
VCE
= 10 V, I
C
= 0.1 A, f = 10 MHz
200
MHz
Turn-on time
ton
IC = 1 A, Resistance loaded
0.2
µs
Storage time
tstg
IB1 = 0.1 A, IB2 = − 0.1 A
1.5
µs
Fall time
tf
VCC
= 50 V
0.1
µs
Rank
Q
P
hFE1
500 to 1 500
1 300 to 2 300
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Internal Connection
B
C
E


Html Pages

1  2 


Fiches technique Télécharger

Go To PDF Page

Numéro de composants électroniques

No de pièceDescriptionHtml ViewFabricant
2SD2486 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio 1  2  Panasonic Semiconductor
2SD2527 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio 1  2  Panasonic Semiconductor
2SD1753 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio 1  2  Panasonic Semiconductor
2SD1754 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio 1  2  Panasonic Semiconductor
2SD2544 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio 1  2  3  Panasonic Semiconductor
2SD1258 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio 1  2  Panasonic Semiconductor
2SD1776 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio 1  2  3  Panasonic Semiconductor
2SD2375 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio 1  2  Panasonic Semiconductor
2SD2528 Silicon NPN epitaxial planar type For power amplification with high forward current transfer ratio 1  2  Panasonic Semiconductor
2SD1755 Silicon NPN epitaxial planar type For power amplification with high forward current transfer ratio 1  2  3  Panasonic Semiconductor

Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn