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SI4376DY-T1 Fiches technique(PDF) 1 Page - Vishay Siliconix

No de pièce SI4376DY-T1
Description  Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI4376DY-T1 Fiches technique(HTML) 1 Page - Vishay Siliconix

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FEATURES
D LITTLE FOOTr Plus Schottky
D Si4830DY Pin Compatible
D PWM Optimized
D 100% Rg Tested
APPLICATIONS
D Asymmetrical Buck-Boost DC/DC Converter
Si4376DY
Vishay Siliconix
Document Number: 71934
S-31726—Rev. C, 18-Aug-03
www.vishay.com
1
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
Channel 1
0.020 @ VGS = 10 V
7.5
Channel-1
30
0.0275 @ VGS = 4.5 V
6.5
Channel 2
30
0.019 @ VGS = 10 V
7.5
Channel-2
0.023 @ VGS = 4.5 V
6.5
SCHOTTKY PRODUCT SUMMARY
VDS (V)
VSD (V)
Diode Forward Voltage
IF (A)
30
0.50 V @ 1.0 A
2.0
S1
D1
G1
D1
S2
D2
G2
D2
SO-8
5
6
7
8
Top View
2
3
4
1
N-Channel MOSFET
D1
G1
S1
N-Channel MOSFET
D2
G2
S2
Schottky Diode
Ordering Information: Si4376DY
Si4376DY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
10 secs
Steady State
Parameter
Symbol
Channel-1
Channel-2
Channel-1
Channel-2
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
"20
"12
"20
"12
V
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
ID
7.5
5.7
Continuous Drain Current (TJ = 150_C)a
TA = 70_C
ID
6.0
4.6
A
Pulsed Drain Current
IDM
30
A
Continuous Source Current (Diode Conduction)a
IS
1.7
0.9
Maximum Power Dissipationa
TA = 25_C
PD
2.0
1.1
W
Maximum Power Dissipationa
TA = 70_C
PD
1.3
0.7
W
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
_C
THERMAL RESISTANCE RATINGS
MOSFET
Schottky
Parameter
Symbol
Typ
Max
Typ
Max
Unit
Mi
J
ti
t A bi ta
t v 10 sec
R
52
62.5
53
62.5
Maximum Junction-to-Ambienta
Steady-State
RthJA
93
110
93
110
_C/W
Maximum Junction-to-Foot (Drain)
Steady-State
RthJF
35
40
35
40
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.


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