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NTHD4502NT1G Datasheet(Fiches technique) 3 Page - VBsemi Electronics Co.,Ltd

Numéro de pièce NTHD4502NT1G
Description  Dual N-Channel 20 V (D-S) MOSFET
Télécharger  8 Pages
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Fabricant  VBSEMI [VBsemi Electronics Co.,Ltd]
Site Internet  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

NTHD4502NT1G Datasheet(HTML) 3 Page - VBsemi Electronics Co.,Ltd

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TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
3
6
9
12
15
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS =10Vthru4V
VGS =3V
VGS =2V
VDS - Drain-to-Source Voltage (V)
0.00
0.012
0.017
0.020
0.05
0.10
0
3
6
9
12
15
VGS =
2 .5 V
VGS =
4.5 V
ID - Drain Current (A)
0
2
4
6
8
10
012
34
VDS =24V
ID =3.4 A
VDS =7.5 V
VDS =15V
Qg - Total Gate Charge (nC)
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
TC = 25 °C
TC = 125 °C
TC = - 55 °C
VGS - Gate-to-Source Voltage (V)
Crss
0
50
100
150
200
250
300
0
5
10
15
20
25
30
Ciss
Coss
VDS - Drain-to-Source Voltage (V)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50
- 25
0
25
50
75
100
125
150
ID =3.4 A
VGS =10V, VGS =4.5 V
TJ - Junction Temperature (°C)
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
NTHD4502NT1G
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