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NTHD4502NT1G Datasheet(Fiches technique) 2 Page - VBsemi Electronics Co.,Ltd

Numéro de pièce NTHD4502NT1G
Description  Dual N-Channel 20 V (D-S) MOSFET
Télécharger  8 Pages
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Fabricant  VBSEMI [VBsemi Electronics Co.,Ltd]
Site Internet  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

NTHD4502NT1G Datasheet(HTML) 2 Page - VBsemi Electronics Co.,Ltd

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Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
30
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = 250 µA
29
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
- 4
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
1.2
2.2
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
1
µA
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 10 V
10
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 4.5 V, ID = 3.4 A
0.0
17
0.0
22
Ω
VGS = 2.5 V, ID = 3.0 A
0.0
23
0.0
28
Forward Transconductancea
gfs
VDS = 15 V, ID = 3.4 A
10
S
Dynamicb
Input Capacitance
Ciss
VDS = 15 V, VGS = 0 V, f = 1 MHz
235
pF
Output Capacitance
Coss
45
Reverse Transfer Capacitance
Crss
16
Total Gate Charge
Qg
VDS = 15 V, VGS = 10 V, ID = 3.4 A
3.7
6
nC
VDS = 15 V, VGS = 4.5 V, ID = 3.4 A
1.8
3
Gate-Source Charge
Qgs
0.74
Gate-Drain Charge
Qgd
0.42
Gate Resistance
Rg
f = 1 MHz
1
5
10
Ω
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 5.6 Ω
ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω
10
20
ns
Rise Time
tr
15
30
Turn-Off Delay Time
td(off)
10
20
Fall Time
tf
10
20
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 5.6 Ω
ID ≅ 2.7 A, VGEN = 10 V, Rg = 1 Ω
510
Rise Time
tr
15
30
Turn-Off Delay Time
td(off)
10
20
Fall Time
tf
10
20
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
1.17
A
Pulse Diode Forward Current
ISM
15
Body Diode Voltage
VSD
IS = 2.7 A, VGS = 0 V
0.85
1.2
V
Body Diode Reverse Recovery Time
trr
IF = 2.7 A, dI/dt = 100 A/µs, TJ = 25 °C
10
20
ns
Body Diode Reverse Recovery Charge
Qrr
410
nC
Reverse Recovery Fall Time
ta
6
ns
Reverse Recovery Rise Time
tb
4
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
NTHD4502NT1G
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