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NTHD4502NT1G Datasheet(Fiches technique) 6 Page - VBsemi Electronics Co.,Ltd

Numéro de pièce NTHD4502NT1G
Description  Dual N-Channel 20 V (D-S) MOSFET
Télécharger  8 Pages
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Fabricant  VBSEMI [VBsemi Electronics Co.,Ltd]
Site Internet  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

NTHD4502NT1G Datasheet(HTML) 6 Page - VBsemi Electronics Co.,Ltd

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TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
Normalized Thermal Transient Impedance, Junction-to-Ambient
10-3
10-2
1
10
1000
10-1
10-4
100
0.2
0.1
Square Wave Pulse Duration (s)
1
0.1
0.01
t1
t2
Notes:
PDM
1. Duty Cycle, D =
2. Per Unit Base = RthJA =150 °C/W
3. TJM -TA =PDMZthJA(t)
t1
t2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
Normalized Thermal Transient Impedance, Junction-to-Foot
10-3
10-2
0
1
1
10-1
10-4
0.2
0.1
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
1
0.1
0.01
0.05
Single Pulse
0.02
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
NTHD4502NT1G
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