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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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NTHD4502NT1G Datasheet(Fiches technique) 4 Page - VBsemi Electronics Co.,Ltd |
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NTHD4502NT1G Datasheet(HTML) 4 Page - VBsemi Electronics Co.,Ltd |
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 - 50 - 25 0 25 50 75 100 125 150 ID = 250 μA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power (Junction-to-Ambient) 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 02 4 6 8 10 TJ =25 °C ID =3.4 A TJ = 125 °C VGS - Gate-to-Source Voltage (V) 0 1 2 3 4 5 6 0.01 0.1 1 10 100 1000 Time (s) Safe Operating Area, Junction-to-Ambient 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse Limited by RDS(on)* BVDSS Limited 1ms 100 μs 10 ms VDS - Drain-to-Source Voltage (V) *V GS > minimum VGS at which RDS(on) is specified DC 1s,10s 100 ms E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw NTHD4502NT1G 4 |
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